P2353AB - MCU CMOS 64 LD 33MHZ 8K EPRM, -40C to 85C, 64-TQFP, TRAY MCU CMOS 68 LD 33MHZ 8K EPRM, 0C to 70C, 68-PLCC, TUBE MCU CMOS 44 LD 33MHZ 4K EPRM, -40C to 85C, 44-PLCC, TUBE 18LD 20MHZ .5K EPRM/128 EEPROM, -40C to 85C, 18-PDIP, TUBE SIDAC|77V V(BO) MAX|800MA I(S)|TO-220VAR MCU CMOS 18 LD 20MHZ 1K FLASH, -40C to 85C, 18-SOIC 300mil, T/R SIDAC|160V V(BO) MAX|800MA I(S)|TO-220VAR SIDAC|180V V(BO) MAX|800MA I(S)|TO-220VAR SIDAC|220V V(BO) MAX|800MA I(S)|TO-220VAR SIDAC|300V V(BO) MAX|800MA I(S)|TO-220VAR SIDAC|350V V(BO) MAX|800MA I(S)|TO-220VAR 20LD 4MHZ 1K EPRM/128 EEPROM, -40C to 85C, 20-SSOP 208mil, TUBE MCU CMOS 28 LD 40MHZ 16K OTP, -40C to 85C, 28-SPDIP, TUBE MCU CMOS 44 LD 25MHZ 4K EPRM, -40C to 85C, 44-TQFP, TRAY SIDAC|180V V(BO) MAX|800MA I(S)|TO-92VAR MCU CMOS 20LD 2K FLASH, 0C to 70C, 20-SSOP 208mil, T/R SIDAC|220V V(BO) MAX|800MA I(S)|TO-92VAR MCU CMOS 18LD 2K EPRM/128 EEPROM, -40C to 85C, 18-PDIP, TUBE SIDAC|160V V(BO) MAX|800MA I(S)|TO-92VAR 18LD 20MHZ 2K EPRM/128 EEPROM, -40C to 85C, 18-SOIC 300mil, T/R SIDAC|98V V(BO) MAX|800MA I(S)|TO-92VAR SIDAC|400V V(BO) MAX|800MA I(S)|TO-92VAR SIDAC|350V V(BO) MAX|800MA I(S)|TO-92VAR SIDAC|130V V(BO) MAX|800MA I(S)|DO-214AA SIDAC|40V V(BO) MAX|800MA I(S)|TO-92VAR SIDAC|210V V(BO) MAX|800MA I(S)|TO-220VAR 20LD 20MHZ 2K FLASH, -40C to 85C, 20-SSOP 208mil, T/R 20LD 4MHZ 2K EPRM/128 EEPROM, -40C to 85C, 20-SSOP 208mil, T/R MCU CMOS 18 LD LOW PWR, -40C to 85C, 18-SOIC 300mil, T/R SIDAC的| 260伏特五（公报）最大| 800mA的我（县）|DO - 214AA SIDAC的| 77V V（下公报）最大| 800mA的我（县）|220VAR SIDAC的| 40V的五（公报）最大| 800mA的我（县）|220VAR SIDAC的| 130V五（公报）最大| 800mA的我（县）|220VAR SIDAC的| 180V五（公报）最大| 800mA的我（县）|220VAR SIDAC的| 180V五（公报）最大| 800mA的我（县）|20VAR SIDAC的| 220五（公报）最大| 800mA的我（县）|20VAR MCU CMOS 40 LD 4MHZ 8K OTP, -40C to 85C, 40-PDIP, TUBE SIDAC的| 40V的五（公报）最大| 800mA的我（县）|2VAR MCU CMOS 44 LD 10MHZ 8K OTP, 0C to 70C, 44-PLCC, TUBE SIDAC的| 40V的五（公报）最大| 800mA的我（县）|2VAR SIDAC|98V V(BO) MAX|800MA I(S)|DO-214AA SIDAC的| 98V V（下公报）最大| 800mA的我（县）|DO - 214AA SIDAC|25V V(BO) MAX|800MA I(S)|DO-214AA SIDAC的| 25V的五（公报）最大| 800mA的我（县）|DO - 214AA SIDAC|220V V(BO) MAX|800MA I(S)|DO-214AA SIDAC的| 220五（公报）最大| 800mA的我（县）|DO - 214AA MCU CMOS 40 LD 10MHZ 8K OTP, -40C to 85C, 40-PDIP, TUBE SIDAC的| 40V的五（公报）最大| 800mA的我（县）|2VAR MCU CMOS 40 LD 10MHZ 8K OTP, -40C to 125C, 40-PDIP, TUBE SIDAC的| 40V的五（公报）最大| 800mA的我（县）|2VAR 14 PIN, 4KB FLASH, 128 RAM, 12 I/O, -40C to 85C, 16-QFN, T/R SIDAC的| 130V五（公报）最大| 800mA的我（县）|20VAR 14 PIN, 1.5KB STD FLASH, 67 RAM, 12 I/O, PB FREE, -40C to 85C, 14-SOIC 150mil, T/R SIDAC的| 98V V（下公报）最大| 800mA的我（县）|2VAR MCU CMOS 44 LD 33MHZ 4K EPRM, -40C to 85C, 44-TQFP, TRAY SIDAC的| 260伏特五（公报）最大| 800mA的我（县）|2VAR MCU CMOS 40 LD 40MHZ 8K OTP, -40C to 85C, 40-PDIP, TUBE SIDAC的| 300V五（公报）最大| 800mA的我（县）|2VAR MCU CMOS 44 LD 20MHZ 4K EPRM, -40C to 125C, 44-MQFP, TRAY SIDAC的| 25V的五（公报）最大| 800mA的我（县）|2VAR SIDAC|400V V(BO) MAX|800MA I(S)|TO-220VAR SIDAC的| 400V五（公报）最大| 800mA的我（县）|20VAR MCU CMOS 68 LD 16MHZ 16K EPRM, 0C to 70C, 68-PLCC, TUBE SIDAC的| 260伏特五（公报）最大| 800mA的我（县）|20VAR MCU CMOS 28 LD 40MHZ 16K OTP, -40C to 85C, 28-SOIC 300mil, T/R SIDAC的| 300V五（公报）最大| 800mA的我（县）|2VAR SIDAC|250V V(BO) MAX|800MA I(S)|TO-220VAR SIDAC的| 250V五（公报）最大| 800mA的我（县）|20VAR |
